Vishay Siliconix's SIHG33N60EF-GE3 is a Vishay Siliconix through-hole MOSFET.

• Popularity: Medium
• Supply and Demand: Limited
• Maximum Power Dissipation: 278W (Tc)
• Channel Type: N
• Drain-Source Voltage: 600V
• Gate-Source Voltage (Vgs): ±30V
• Gate Charge (Qg): 155nC @ 10V
• Input Capacitance (Ciss): 3454pF @ 100V
• Operating Temperature Range (TJ): -55°C to 150°C
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Manufacturer Package: TO-247AC
• Maximum Rds On: 98 mOhm @ 16.5A @ 10V
• Introduction Date: November 17, 2014
• Estimated EOL Date: 2031
• Compliance: Halogen Free