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SIHH070N60EF-T1GE3

Part No SIHH070N60EF-T1GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 71mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2647 pF @ 100 V
Power Dissipation (Max) 202W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Base Product Number SIHH070
Other Names 742-SIHH070N60EF-T1GE3CT,742-SIHH070N60EF-T1GE3DKR,742-SIHH070N60EF-T1GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277714-SIHH070N60EF-T1GE3
Ultra Librarian 3D Model Ultra Librarian SIHH070N60EF-T1GE3 CAD Model

Description

The Vishay Siliconix electronic component is a MOSFET transistor with an N-Channel FET type and EF series.

  • FET Type: N-Channel
  • Series: EF
  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Power Dissipation: 202W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2647 pF @ 100 V
  • Temperature Range for Operating: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $61.1195 $61.1195
2+ $50.1493 $100.2986
4+ $48.5821 $194.3284
5+ $47.0150 $235.0750
6+ $45.4478 $272.6868
8+ $40.7463 $325.9704
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,200 pieces
Order Increment : 1 pcs
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Shipped from HK warehouse
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