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SIHH27N60EF-T1-GE3

Part No SIHH27N60EF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2609 pF @ 100 V
Power Dissipation (Max) 202W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Base Product Number SIHH27
Other Names SIHH27N60EF-T1-GE3TR,SIHH27N60EF-T1-GE3DKR,SIHH27N60EF-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277773-SIHH27N60EF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIHH27N60EF-T1-GE3 CAD Model

Description

The SIHH27N60EF-T1-GE3 is an N-Channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 29A (Tc)
  • Rds On: 100mOhm @ 13.5A, 10V
  • Power Dissipation: 202W (Tc)
  • Gate Charge: 135 nC @ 10 V
  • Input Capacitance: 2609 pF @ 100 V
  • Gate-Source Voltage: ±30V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $64.9030 $64.9030
2+ $53.2538 $106.5076
3+ $51.5896 $154.7688
5+ $49.9254 $249.6270
6+ $48.2612 $289.5672
7+ $43.2687 $302.8809
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Availability: 2,700 pieces
Order Increment : 1 pcs
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