The Vishay 1093065-SIHH11N65E-T1-GE3 is a N-Channel MOSFET that is widely used in power management applications.

• Manufacturer: Vishay
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Temperature Range: -55°C to 150°C (TJ)
• Packaging: Tape & reel
• Estimated Production Lead Time: 51 weeks