The SIHH14N60E-T1-GE3 is an N-channel MOSFET transistor designed for use in Discrete Semiconductor Products.

• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id): 16A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 255mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250μA
• Power Dissipation (Max): 147W (Tc)
• Package: 8-PowerTDFN package
• Supplier Device Package: PowerPAK® 8 x 8
• Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1416 pF @ 100 V
• Vgs (Max): ±30V
• Temperature Range - Operating: -55°C ~ 150°C (TJ)
• Manufacturer: Vishay Siliconix
• Also known as: SIHH14N60E-T1-GE3DKR, SIHH14N60E-T1-GE3TR, and SIHH14N60E-T1-GE3CT
• Suitable for: Use in various electronic applications.