The SIHLR120TR-GE3 is an N-Channel power MOSFET manufactured by Vishay Semiconductors, designed for a broad range of power switching applications. This device is engineered to provide low on-state resistance and gate charge, thus enhancing efficiency and reducing power losses in demanding circuits.
Applications:
- DC-DC Converters
- Power Supplies
- Motor Control Circuits
- Solid State Relays
- Lighting Applications
Features:
- Low On-State Resistance (Rds(on)): Minimizes conduction losses, increasing efficiency.
- Low Gate Charge (Qg): Reduces switching losses, enabling higher frequency operation.
- Avalanche Rated: Provides robustness against voltage transients and overvoltage conditions.
- Trench MOSFET Technology: Enhances performance characteristics.
- Lead (Pb)-free and RoHS Compliant: Meets environmental standards.
- Halogen-free according to IEC 61249-2-21 definition
Benefits:
- Improved Efficiency: Low Rds(on) and Qg contribute to high efficiency in power conversion applications.
- Reduced Heat Dissipation: Lower power losses minimize heat generation, simplifying thermal management.
- Enhanced Reliability: Avalanche rating provides added robustness and protection.
- High-Frequency Operation: Low gate charge allows for effective high-frequency switching.
- Environmentally Friendly: Lead-free and RoHS compliant design minimizes environmental impact.
Additional Details:
The SIHLR120TR-GE3 comes in a PowerPAK® SO-8 package suitable for surface mount technology. It features a drain-source voltage (Vds) of 100 V, continuous drain current (Id) of up to 48 A (dependent on operating conditions), and a typical on-state resistance (Rds(on)) of 0.024 Ohms at Vgs = 10V. The device operates over a wide temperature range. Gate threshold voltage is typically 2.7V. This is an N-Channel MOSFET.
