The SIHLR120TR-GE3 is an N-Channel power MOSFET manufactured by Vishay Semiconductors, designed for a broad range of power switching applications. This device is engineered to provide low on-state resistance and gate charge, thus enhancing efficiency and reducing power losses in demanding circuits.

Applications:

• DC-DC Converters
• Power Supplies
• Motor Control Circuits
• Solid State Relays
• Lighting Applications

Features:

• Low On-State Resistance (Rds(on)): Minimizes conduction losses, increasing efficiency.
• Low Gate Charge (Qg): Reduces switching losses, enabling higher frequency operation.
• Avalanche Rated: Provides robustness against voltage transients and overvoltage conditions.
• Trench MOSFET Technology: Enhances performance characteristics.
• Lead (Pb)-free and RoHS Compliant: Meets environmental standards.
• Halogen-free according to IEC 61249-2-21 definition

Benefits:

• Improved Efficiency: Low Rds(on) and Qg contribute to high efficiency in power conversion applications.
• Reduced Heat Dissipation: Lower power losses minimize heat generation, simplifying thermal management.
• Enhanced Reliability: Avalanche rating provides added robustness and protection.
• High-Frequency Operation: Low gate charge allows for effective high-frequency switching.
• Environmentally Friendly: Lead-free and RoHS compliant design minimizes environmental impact.

Additional Details:

The SIHLR120TR-GE3 comes in a PowerPAK® SO-8 package suitable for surface mount technology. It features a drain-source voltage (Vds) of 100 V, continuous drain current (Id) of up to 48 A (dependent on operating conditions), and a typical on-state resistance (Rds(on)) of 0.024 Ohms at Vgs = 10V. The device operates over a wide temperature range. Gate threshold voltage is typically 2.7V. This is an N-Channel MOSFET.