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Same model may have multiple batches, images only for reference.
SIHP100N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP100N60E-GE3

Part No SIHP100N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP100N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1851 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP100
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277756-SIHP100N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP100N60E-GE3 CAD Model

Description

The Vishay SIHP100N60E-GE3 is an N-channel MOSFET that is used in power management applications.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 30A (Tc)
  • Maximum Power Dissipation: 208W (Tc)
  • Gate Charge: 50 nC @ 10 V
  • Type: Through-hole component
  • Package: TO-220-3 case
  • Family: SIHP100 family
  • ECCN rating: EAR99
  • Drive Voltage: 10V

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