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Same model may have multiple batches, images only for reference.
SIHP16N50C-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHP16N50C-E3

Part No SIHP16N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-220AB
Datasheet
SIHP16N50C-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 211711-SIHP16N50C-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHP16N50C-E3 CAD Model

Description

The SIHP16N50C-E3 is an N-channel MOSFET manufactured by Vishay.

  • Maximum Power Dissipation: 250W (Tc)
  • Package: TO-220AB
  • Mounting Type: through-hole
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 16A @ 25°C (Tc)
  • Maximum Rds On: 380 mOhm @ 8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8281 $57.9372
30+ $3.9617 $118.8510
46+ $3.8378 $176.5388
63+ $3.7140 $233.9820
81+ $3.5902 $290.8062
108+ $3.2188 $347.6304
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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