The Vishay SIHP30N60E-E3 is an N-Channel MOSFET transistor with a TO-220AB case/package.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current at 25°C: 29A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V
• Designed for: Discrete Semiconductor Products
• Power Dissipation (Max): 250W (Tc)
• Mounting Technology: Through Hole
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Status: Active
• Operating Temperature: -55°C to 150°C (TJ)
• Maximum Gate-Source Voltage: ±30V
• Max Gate Charge: 130nC @ 10V