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Same model may have multiple batches, images only for reference.
SIHP5N50D-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP5N50D-GE3

Part No SIHP5N50D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.3A TO220AB  /  N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB
Datasheet
SIHP5N50D-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP5
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1028567-SIHP5N50D-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP5N50D-GE3 CAD Model

Description

The Vishay Siliconix SIHP5N50D-GE3 is a discrete semiconductor product that is an N-channel MOSFET with a drain to source voltage of 500V.

  • Continuous Drain: 5.3A
  • Rds on (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
  • Mounting Type: Through hole
  • Package: TO-220-3

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