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Same model may have multiple batches, images only for reference.
SIR108DP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR108DP-T1-RE3

Part No SIR108DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIR108DP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2060 pF @ 50 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR108
Other Names SIR108DP-T1-RE3TR,SIR108DP-T1-RE3CT,SIR108DP-RE3,SIR108DP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277641-SIR108DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR108DP-T1-RE3 CAD Model

Description

The TrenchFET Gen IV electronic component is a SIR108DP-T1-RE3 model with a drain to source voltage of 100V and a continuous drain current of 12.4A (Ta), 45A (Tc).

  • Maximum Rds On: 13.5mOhm @ 10A, 10V
  • Gate Charge: 41.5 nC @ 10 V
  • Package: PowerPAK SO-8
  • Technology: MOSFET (Metal Oxide)
  • Temperature Range: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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Availability: 5,504 pieces
MOQ: 22 pcs
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