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SIRA58ADP-T1-RE3

Part No SIRA58ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3030 pF @ 20 V
Power Dissipation (Max) 5W (Ta), 56.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA58
Other Names SIRA58ADP-T1-RE3TR,SIRA58ADP-T1-RE3DKR,SIRA58ADP-T1-RE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277654-SIRA58ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA58ADP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIRA58ADP-T1-RE3 is an N-channel MOSFET transistor that is widely used in electronic circuits.

  • Package: 3,000
  • Function: high-speed switching
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id) @ 25°C: 32.3A
  • Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,980 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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