The SIR122DP-T1-RE3 is a N-Channel MOSFET transistor from Vishay Siliconix's TrenchFET® Gen IV series.

• Drain to Source Voltage (Vdss): 80 V
• Continuous Drain Current (Id): 16.7A @ 25°C (59.6A @ Tc)
• Maximum On-Resistance (Rds On): 7.4mOhm @ 10A and 10V gate-source voltage (Vgs)
• Gate Threshold Voltage (Vgs(th)): 3.8V @ 250μA
• Maximum Gate-Source Voltage (Vgs): ±20V
• Maximum Power Dissipation: 5.2W @ Ta and 65.7W @ Tc
• Package/Case: PowerPAK® SO-8
• Device Package: PowerPAK® SO-8
• Maximum Gate Charge (Qg): 44 nC @ 10V gate-source voltage (Vgs)
• Maximum Input Capacitance (Ciss): 1950 pF @ 40V drain-source voltage (Vds)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Suitable for: SMD (SMT) mounting technology