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Same model may have multiple batches, images only for reference.
SIR462DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR462DP-T1-GE3

Part No SIR462DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A PPAK SO-8
Datasheet
SIR462DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1155pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028758-SIR462DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIR462DP-T1-GE3 CAD Model

Description

The Vishay SIR462DP-T1-GE3 is a high-quality MOSFET that is designed to offer reliable performance in various applications.

  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Rds On at Id,Vgs: 7.9 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4534 $52.1410
270+ $0.3720 $100.4400
420+ $0.3604 $151.3680
575+ $0.3488 $200.5600
745+ $0.3372 $251.2140
995+ $0.3023 $300.7885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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