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SIR662DP-T1-GE3

Part No SIR662DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R / MOSFET N-CH 60V 60A PPAK SO-8
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Rohs State Need to verify
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 4365pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 134720-SIR662DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Family Name SiR662DP
Introduction Date February 14, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SIR662DP-T1-GE3 CAD Model

Description

The Vishay SiR662DP MOSFET is a high-performance N-channel power MOSFET designed for use in power management and industrial applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum Rds On: 2.7 mOhm @ 20A and 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 96nC @ 10V
  • Maximum Input Capacitance: 4365pF @ 30V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0223 $50.2230
25+ $4.1209 $103.0225
38+ $3.9921 $151.6998
52+ $3.8633 $200.8916
67+ $3.7346 $250.2182
90+ $3.3482 $301.3380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,808 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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