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Same model may have multiple batches, images only for reference.
SIR680LDP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR680LDP-T1-RE3

Part No SIR680LDP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 31.8A/130A PPAK / N-Channel 80 V 31.8A (Ta), 130A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 31.8A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7250 pF @ 40 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR680
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIR680LDP-T1-RE3DKR,742-SIR680LDP-T1-RE3TR,742-SIR680LDP-T1-RE3CT
Standard Package 3,000
Win Source Part Number 1005638-SIR680LDP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR680LDP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIR680LDP-T1-RE3 is an N-channel MOSFET transistor that is used in various applications. The supply and demand status of this component is unlimited.

  • Manufacturer: Vishay Siliconix
  • Win Source Part Number: 1005638
  • Maximum Operating Temperature: 150 °C
  • Power Dissipation: 6.25W
  • Package: PowerPAK SO-8
  • Gate Charge: 135 nC @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3644 $52.0168
52+ $1.9400 $100.8800
80+ $1.8794 $150.3520
110+ $1.8188 $200.0680
143+ $1.7582 $251.4226
191+ $1.5763 $301.0733
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