The SIR788DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay. This power MOSFET is designed for high-efficiency power conversion and load switching applications. It leverages advanced trench MOSFET technology to achieve low on-resistance (Rds(on)) and gate charge (Qg), resulting in reduced power losses and improved overall system performance. The device is available in a PowerPAK® SO-8 single package.

Applications

• Synchronous Rectification in DC-DC Converters
• Load Switching
• Power Management in Portable Devices
• Motor Control Applications
• Battery Management Systems

Features

• Low On-Resistance (Rds(on)): Minimizes conduction losses.
• Low Gate Charge (Qg): Reduces switching losses.
• Trench MOSFET Technology: Provides high cell density for efficient performance.
• PowerPAK® SO-8 Single Package: Compact surface-mount package for efficient thermal management.
• 100% Rg Tested: Ensures robust avalanche performance.
• RoHS Compliant: Compliant with environmental regulations.

Benefits

• Increased Efficiency: Reduced power losses lead to higher efficiency in power conversion applications.
• Improved Thermal Performance: The PowerPAK® SO-8 package facilitates efficient heat dissipation.
• Reduced Component Count: Integrated design simplifies circuit layouts.
• Enhanced System Reliability: Robust design ensures stable performance under various operating conditions.
• Smaller Footprint: Compact package allows for higher power density in space-constrained applications.

Additional Details

The SIR788DP-T1-GE3 has a drain-source voltage (Vds) rating of 30V and can handle a continuous drain current (Id) of up to 15A (depending on thermal conditions). The typical Rds(on) value is very low, contributing to reduced conduction losses. The device is designed for logic-level gate drive, making it compatible with microcontroller and other low-voltage control circuits. It operates over a wide temperature range. The PowerPAK® SO-8 package features exposed drain pads for improved thermal conductivity, allowing for effective heat removal from the device. This contributes to its ability to handle high current levels without overheating.

Vishay's SIR788DP-T1-GE3 is a high-performance MOSFET suitable for a variety of power management and switching applications, offering a balance of efficiency, thermal performance, and compact size.