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Same model may have multiple batches, images only for reference.
SIR808DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIR808DP-T1-GE3

Part No SIR808DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 20A POWERPAK
Datasheet
SIR808DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 22.8nC @ 10V
Max Input Capacitance 815pF @ 12.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 29.8W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211729-SIR808DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR808DP-T1-GE3 CAD Model

Description

The SIR808DP-T1-GE3 is an obsolete (EOL) electronic component manufactured by Vishay.

  • Power Dissipation (Max): 29.8W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6710 $60.3900
210+ $0.5506 $115.6260
325+ $0.5334 $173.3550
450+ $0.5162 $232.2900
580+ $0.4990 $289.4200
775+ $0.4474 $346.7350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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