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Same model may have multiple batches, images only for reference.
SIR818DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR818DP-T1-GE3

Part No SIR818DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A PPAK SO-8
Datasheet
SIR818DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 3660pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028765-SIR818DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR818DP-T1-GE3 CAD Model

Description

The Vishay SIR818DP-T1-GE3 is an N-Channel MOSFET that is designed to handle high power dissipation of up to 5.2W (Ta) and 69W (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Rds On at Id,Vgs: 2.8 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,600 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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