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SIR862DP-T1-GE3

Part No SIR862DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3800pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096483-SIR862DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Signal Processing, Industrial
Ultra Librarian 3D Model Ultra Librarian SIR862DP-T1-GE3 CAD Model

Description

The Vishay SIR862DP-T1-GE3 is an N-Channel MOSFET designed for use in signal processing and industrial applications.

  • Package: PowerPAK SO-8
  • Power Dissipation: 5.2W (Ta), 69W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 250μA
  • Maximum Gate Charge: 90nC @ 10V
  • Maximum Input Capacitance: 3800pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 2.8 mOhm @ 15A, 10V
  • Popularity: Popular and reliable
  • Suitable for: Discrete semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4958 $52.0590
250+ $0.4069 $101.7250
385+ $0.3941 $151.7285
525+ $0.3814 $200.2350
680+ $0.3687 $250.7160
910+ $0.3306 $300.8460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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