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Same model may have multiple batches, images only for reference.
SIR882ADP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIR882ADP-T1-GE3

Part No SIR882ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A PPAK SO-8
Datasheet
SIR882ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1975pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 8.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 125553-SIR882ADP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian SIR882ADP-T1-GE3 CAD Model

Description

The Vishay SIR882ADP-T1-GE3 is a MOSFET with an N-Channel polarity.

  • Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 60A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
30+ $1.8626 $55.8780
70+ $1.5283 $106.9810
105+ $1.4806 $155.4630
140+ $1.4328 $200.5920
185+ $1.3851 $256.2435
245+ $1.2418 $304.2410
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