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SIRA18ADP-T1-GE3

Part No SIRA18ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30.6A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 15 V
Power Dissipation (Max) 14.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA18
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 741741-SIRA18ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIRA18ADP-T1-GE3 CAD Model

Description

The 741741-SIRA18ADP-T1-GE3 is a N-channel MOSFET transistor from Vishay. It is designed for use in discrete semiconductor products and belongs to the FETs, MOSFETs - Single FETs, MOSFETs category.

  • Drain to source voltage (Vdss): 30V
  • Continuous drain current (Id): 30.6A @ 25°C
  • Maximum on-resistance (Rds On): 8.7mOhm @ 10A and 10V
  • Gate charge (Qg): 21.5nC @ 10V
  • Input capacitance (Ciss): 1000pF @ 15V
  • Package: PowerPAK SO-8
  • Power dissipation: 14.7W
  • Operating temperature range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,984 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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