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SIRA62DP-T1-RE3

Part No SIRA62DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 51.4A/80A PPAK / N-Channel 30 V 51.4A (Ta), 80A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 51.4A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 4460 pF @ 15 V
Power Dissipation (Max) 5.2W (Ta), 65.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA62
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIRA62DP-T1-RE3CT,SIRA62DP-T1-RE3TR,SIRA62DP-T1-RE3DKR
Standard Package 3,000
Win Source Part Number 961452-SIRA62DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA62DP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIRA62DP-T1-RE3 is a highly efficient and reliable N-Channel MOSFET transistor used in various applications such as printers, copiers, and vending machines.

  • Win Source Part Number: 961452-SIRA62DP-T1-RE3
  • Family: Discrete semiconductor products
  • Power Dissipation: 5.2W (Ta), 65.7W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6431 $51.4480
170+ $0.6024 $102.4080
260+ $0.5820 $151.3200
370+ $0.5413 $200.2810
480+ $0.5210 $250.0800
600+ $0.5006 $300.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,125 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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