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SIRA80DP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIRA80DP-T1-RE3

Part No SIRA80DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A PPAK SO-8  /  N-Channel 30 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
SIRA80DP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9530 pF @ 15 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIRA80
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIRA80DP-T1-RE3TR,SIRA80DP-T1-RE3CT,SIRA80DP-T1-RE3DKR
Standard Package 3,000
Win Source Part Number 1178945-SIRA80DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIRA80DP-T1-RE3 CAD Model

Description

The SIRA80DP-T1-RE3 is a N-Channel MOSFET transistor designed and manufactured by Vishay Siliconix.

  • Supply and Demand Status: Good
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 100A
  • On-Resistance: 0.62mOhm
  • Gate Charge: 188nC

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