The SIS407DN is a dual N-Channel Power MOSFET from Vishay Siliconix. It is designed for high-efficiency power conversion and load switching applications. This MOSFET offers low on-resistance and fast switching speeds, contributing to overall system efficiency and performance.

Applications:

• DC-DC converters
• Load switches
• Power management in portable devices
• Motor control
• Backlighting in LCD displays

Features:

• Dual N-Channel configuration
• Low on-resistance (R<sub>DS(on))
• Fast switching speed
• Low gate charge (Qg)
• 100% Rg Tested
• Halogen-free according to IEC 61249-2-21 definition
• RoHS Compliant

Benefits:

• High efficiency in power conversion due to low R<sub>DS(on)
• Improved performance in high-frequency applications due to fast switching speed
• Simplified gate drive requirements due to low gate charge
• Enhanced reliability through 100% Rg testing
• Environmentally friendly due to halogen-free construction and RoHS compliance
• Compact design saves board space

Additional Details:

The SIS407DN features a drain-source voltage (V<sub>DS) rating of 30V and a continuous drain current (I<sub>D) of 6.8A per channel. The typical on-resistance (R<sub>DS(on)) at V<sub>GS = 10V is 23 mΩ. The device is packaged in a PowerPAK® SC-70, which provides excellent thermal performance in a small footprint. The operating junction temperature range is -55°C to +150°C. The dual N-Channel configuration allows for versatile circuit designs and efficient space utilization.

The SIS407DN's combination of low on-resistance, fast switching speed, and compact package makes it an excellent choice for a wide range of power management applications. Its robust design and compliance with environmental standards further enhance its suitability for modern electronic devices.