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SIS413DN-T1-GE3

Name: SIS413DN-T1-GE3
Brand: Vishay
SKU: 513254
Availability: InStock
Rating: 4.93 (48 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIS413DN-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 30V 18A PPAK 1212-8
Datasheet	SIS413DN-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.5V @ 250μA
Max Gate Charge	110nC @ 10V
Max Input Capacitance	4280pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs	9.4 mOhm @ 15A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK 1212-8
Dimension	PowerPAK 1212-8
Win Source Part Number	1096496-SIS413DN-T1-GE3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SIS413DN-T1-GE3 CAD Model

Alternative Products

Description

This MOSFET technology electronic component is manufactured by Vishay and has a medium popularity in the market.

Manufacturer: Vishay
Technology: MOSFET
Mounting: SMD (SMT)
Case/Package: PowerPAK 1212-8
Operating Temperature Range: -55°C to 150°C (TJ)
Drain-Source Breakdown Voltage: 30V
Maximum Rds On @ Id,Vgs: 9.4 mOhm @ 15A, 10V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
90+	$0.5572	$50.1480
220+	$0.4572	$100.5840
340+	$0.4429	$150.5860
470+	$0.4286	$201.4420
605+	$0.4143	$250.6515
810+	$0.3715	$300.9150

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 21,569 pieces

MOQ: 90 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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