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Same model may have multiple batches, images only for reference.
SIS424DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIS424DN-T1-GE3

Part No SIS424DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 35A PPAK 1212-8
Datasheet
SIS424DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Maximum Rds On at Id,Vgs 6.4 mOhm @ 19.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 064665-SIS424DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIS424DN-T1-GE3 CAD Model

Description

The Vishay SIS424DN-T1-GE3 is a high-performance MOSFET transistor designed for use in power management and battery protection circuits.

  • Polarity: N-Channel
  • Power Dissipation: 3.7W
  • Package: PowerPAK 1212-8
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 35A (Tc) @ 25°C
  • Maximum Rds on at Id,Vgs: 6.4 mOhm @ 19.6A, 10V
  • Halogen-Free: Yes
  • RoHS compliant: Yes
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6564 $59.0760
215+ $0.5386 $115.7990
335+ $0.5218 $174.8030
460+ $0.5050 $232.3000
595+ $0.4881 $290.4195
795+ $0.4377 $347.9715
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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