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Same model may have multiple batches, images only for reference.
SIS606BDN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS606BDN-T1-GE3

Part No SIS606BDN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.4A/35.3A PPAK
Datasheet
SIS606BDN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 46 Weeks
Features N-Channel 100 V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer Vishay
Series TrenchFET® Gen IV
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package PowerPAK® 1212-8
Case / Package PowerPAK® 1212-8
Family Name SIS606
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SIS606BDN-T1-GE3CT, SIS606BDN-T1-GE3TR, SIS606BDN-T1-GE3DKR
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 933844-SIS606BDN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS606BDN-T1-GE3 CAD Model

Description

The Vishay TrenchFET Gen IV SIS606BDN-T1-GE3 is an N-channel 100 V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52W (Tc) surface mount PowerPAK 1212-8 transistor.

  • Family: SIS606 family
  • Supplier: Vishay
  • Temperature Range: -55°C to 150°C
  • Package: PowerPAK 1212-8 package
  • Category: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
7+ $8.2841 $57.9887
15+ $6.7972 $101.9580
23+ $6.5848 $151.4504
32+ $6.3724 $203.9168
41+ $6.1600 $252.5600
55+ $5.5227 $303.7485
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Availability: 2,270 pieces
MOQ: 7 pcs
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