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SISA14DN-T1-GE3

Part No SISA14DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1450pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 3.57W (Ta), 26.5W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028777-SISA14DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SISA14DN-T1-GE3 CAD Model

Description

It has a power dissipation of 3.57W (Ta), 26.5W (Tc) and a drain-source breakdown voltage of 30V.

  • Power Dissipation: 3.57W (Ta), 26.5W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 5.1 mOhm @ 10A, 10V
  • Type: N-channel MOSFET
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Case/Package: PowerPAK 1212-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: +20V, -16V
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 1450pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3066 $50.5890
350+ $0.2872 $100.5200
545+ $0.2775 $151.2375
775+ $0.2581 $200.0275
1,010+ $0.2484 $250.8840
1,260+ $0.2387 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,536 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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