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Same model may have multiple batches, images only for reference.
SISA18ADN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SISA18ADN-T1-GE3

Part No SISA18ADN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38.3A 1212-8
Datasheet
SISA18ADN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 21.5nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096506-SISA18ADN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SISA18ADN-T1-GE3 CAD Model

Description

The Vishay 1096506-SISA18ADN-T1-GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 3.2W (Ta), 19.8W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Popularity: Medium
  • Supply and Demand: Balance
  • Mounting Technology: SMD (SMT)
  • Package: Reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
270+ $0.1882 $50.8140
650+ $0.1544 $100.3600
1,005+ $0.1496 $150.3480
1,385+ $0.1448 $200.5480
1,790+ $0.1400 $250.6000
2,395+ $0.1255 $300.5725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 154,690 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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