The Vishay Siliconix 1127044-SISA35DN-T1-GE3 is a MOSFET transistor that belongs to the TrenchFET Gen III series.

• Channel Type: It is a P-channel type
• Drain to Source Voltage: with a drain to source voltage (Vdss) of 30V.
• Continuous Drain Current: The current - continuous drain (Id) @ 25°C is 10A (Ta), 16A (Tc)
• Rds On: the Rds On (Max) @ Id, Vgs is 19mOhm @ 9A, 10V.
• Gate Charge: The gate charge (Qg) (Max) @ Vgs is 42 nC @ 10V
• Input Capacitance: the input capacitance (Ciss) (Max) @ Vds is 1500 pF @ 15V.
• Package: This component is a standard package of 3,000
• Power Dissipation: has a power dissipation (Max) of 3.2W (Ta), 24W (Tc).