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SISA72DN-T1-GE3

Part No SISA72DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 20 V
Power Dissipation (Max) 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISA72
Other Names SISA72DN-T1-GE3TR,SISA72DN-T1-GE3DKR,SISA72DN-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277663-SISA72DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISA72DN-T1-GE3 CAD Model

Description

The SISA72DN-T1-GE3 is an N-channel MOSFET transistor that is used in discrete semiconductor products, specifically in FETs, MOSFETs - Single.

  • Series: TrenchFET® Gen IV
  • Mounting: surface-mount technology
  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 60A @ 25°C
  • Rds On (Max): 3.5mOhm @ 10A and 10V
  • Gate-Source Voltage (Max): +20V and -16V
  • Operating Temperature: -55°C to 150°C
  • Supplier: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6655 $53.2400
185+ $0.5461 $101.0285
285+ $0.5290 $150.7650
395+ $0.5119 $202.2005
510+ $0.4949 $252.3990
680+ $0.4437 $301.7160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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