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SISHA04DN-T1-GE3

Part No SISHA04DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3595 pF @ 15 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
Base Product Number SISHA04
Other Names SISHA04DN-T1-GE3CT,SISHA04DN-T1-GE3TR,SISHA04DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277665-SISHA04DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISHA04DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SISHA04DN-T1-GE3 is a N-Channel MOSFET transistor.

  • Win Source Part Number: 1277665-SISHA04DN-T1-GE3
  • Series: TrenchFET Gen IV
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 30.9A (Ta), 40A (Tc)
  • On-State Resistance (Max): 2.15mOhm @ 15A, 10V
  • Gate Charge (Max): 77nC @ 10Vgs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Package: PowerPAK 1212-8SH

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6296 $59.8120
225+ $0.5167 $116.2575
350+ $0.5005 $175.1750
480+ $0.4844 $232.5120
620+ $0.4682 $290.2840
830+ $0.4197 $348.3510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 980 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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