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SISS05DN-T1-GE3

Part No SISS05DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds 4930 pF @ 15 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS05
Other Names SISS05DN-T1-GE3CT,SISS05DN-T1-GE3DKR,SISS05DN-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277613-SISS05DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS05DN-T1-GE3 CAD Model

Description

The 1277613-SISS05DN-T1-GE3 is a P-Channel MOSFET from Vishay Siliconix.

  • Type: TrenchFET Gen IV MOSFET
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 29.4A @ 25°C
  • Maximum On-Resistance: 3.5mOhm @ 10A and 10V
  • Gate Threshold Voltage: 2.2V @ 250µA
  • Gate Charge: 115nC @ 10V
  • Input Capacitance: 4930pF @ 15V
  • Maximum Gate-Source Voltage: +16V and -20V
  • Package: PowerPAK 1212-8S
  • Operating Temperature Range: -55°C to 150°C
  • Packaging: tape and reel
  • ECCN: EAR99
  • Ideal for: power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1752 $52.8840
105+ $0.9643 $101.2515
165+ $0.9342 $154.1430
225+ $0.9040 $203.4000
290+ $0.8739 $253.4310
385+ $0.7835 $301.6475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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