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Same model may have multiple batches, images only for reference.
SISS06DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISS06DN-T1-GE3

Part No SISS06DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SISS06DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 47.6A (Ta), 172.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.38mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3660 pF @ 15 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS06
Other Names SISS06DN-T1-GE3DKR,SISS06DN-T1-GE3CT,SISS06DN-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277618-SISS06DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS06DN-T1-GE3 CAD Model

Description

Vishay Siliconix presents a MOSFET transistor that comes with N-Channel FET type and has a drain to source voltage of 30V.

  • Continuous Drain Current: 47.6A (Ta), 172.6A (Tc) @ 25°C
  • Maximum On-Resistance: 1.38mOhm @ 15A and 10V
  • Gate Threshold Voltage: 2.2V @ 250μA
  • Power Dissipation: 5W (Ta), 65.7W (Tc) max
  • Packaging: PowerPAK® 1212-8S
  • Gate Charge: 77 nC @ 10Vgs
  • Temperature Range: -55°C to 150°C (TJ)
  • Standard Package: 3,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $83.5821 $83.5821
2+ $80.9702 $161.9404
3+ $78.3583 $235.0749
4+ $75.7463 $302.9852
5+ $67.9105 $339.5525
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