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SISS42DN-T1-GE3

Part No SISS42DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11.8A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 14.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 50 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS42
Other Names SISS42DN-T1-GE3CT,SISS42DN-T1-GE3TR,SISS42DN-GE3,SISS42DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277671-SISS42DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS42DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SISS42DN-T1-GE3 MOSFET is a high-performance N-Channel FET with a drain-to-source voltage of 100 V and a continuous drain current of 11.8A (Ta), 40.5A (Tc).

  • On-Resistance (Max): 14.4mOhm @ 15A, 10V
  • Gate Charge: 38 nC @ 10 V
  • Package: PowerPAK® 1212-8S
  • Technology: MOSFET (Metal Oxide)

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8677 $51.6186
43+ $2.3530 $101.1790
66+ $2.2794 $150.4404
91+ $2.2059 $200.7369
118+ $2.1324 $251.6232
157+ $1.9118 $300.1526
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 540 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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