The SISS42LDN-T1-GE3 is a MOSFET transistor that belongs to the TrenchFET Gen IV series of electronic components.

• Type: N-channel transistor
• Package: tape and reel
• Standard Package: 3,000
• Mounting: SMD (SMT) technology
• Drain to Source Voltage: 100V
• Continuous Drain Current: 11.3A @ 25°C and 39A @ Tc
• Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
• Power Dissipation: 4.8W (Ta) and 57W (Tc)
• Package/Case: PowerPAK® 1212-8S
• Supplier Device Package: PowerPAK® 1212-8S
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• REACH: unaffected
• HTSUS: 8541.29.0095
• Manufacturer: Vishay Siliconix