The 1278511-SIZ320DT-T1-GE3 is a dual N-Channel MOSFET designed for use in various discrete semiconductor products.

• FET Type: Standard
• Drain to Source Voltage: 25V
• Continuous Drain Current: 30A @ 25°C, 40A @ Tc
• Rds on (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250μA
• Power: 16.7W and 31W
• Package/Case: 8-PowerWDFN
• Supplier Device Package: 8-Power33 (3x3)
• Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• MSL Level: 1 (Unlimited)
• HTSUS: 8541.29.0095
• Manufacturer: Vishay Siliconix