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Same model may have multiple batches, images only for reference.
SQ3410EV-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQ3410EV-T1_GE3

Part No SQ3410EV-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A TSOP-6
Datasheet
SQ3410EV-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 1005pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Tc)
Maximum Rds On at Id,Vgs 17.5 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1101700-SQ3410EV-T1_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQ3410EV-T1_GE3 CAD Model

Description

The Vishay 1101700-SQ3410EV-T1_GE3 MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 8A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On: 17.5 mOhm @ 5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1005pF @ 15V
  • Package: 6-TSOP
  • Mounting: SMD (SMT)
  • Power Dissipation: 5W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Applications: power supplies, motor control, and lighting systems

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410+ $0.3703 $151.8230
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970+ $0.3106 $301.2820
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