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Same model may have multiple batches, images only for reference.
SQD25N15-52_GE3 Vishay
Same model may have multiple batches, images only for reference.

SQD25N15-52_GE3

Part No SQD25N15-52_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
SQD25N15-52_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2200pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 107W (Tc)
Rds On (Maximum) @ Id, Vgs 52 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-252, (D-Pak)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 795328-SQD25N15-52_GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SQD25N15-52
ECCN EAR99
Country of Origin Taiwan
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SQD25N15-52_GE3 CAD Model

Description

The Vishay Siliconix SQD25N15-52_GE3 MOSFET is a high-performance automotive-grade TrenchFET.

  • Drain Current: 25A (Tc)
  • Drain-Source Voltage: 150V
  • On-Resistance: 52 mOhm @ 15A, 10V
  • Gate Charge (Qg): 51nC @ 10V
  • Input Capacitance (Ciss): 2200pF @ 25V
  • Package: TO-252-3, D-Pak
  • Temperature Range: -55°C to 175°C

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