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Same model may have multiple batches, images only for reference.
SQD40N10-25-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD40N10-25-GE3

Part No SQD40N10-25-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A TO252
Datasheet
SQD40N10-25-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 3380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212083-SQD40N10-25-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQD40N10-25-GE3 CAD Model

Description

Vishay SQD40N10-25-GE3 is a N-channel MOSFET surface mount technology component with a drain-source breakdown voltage of 100V and a continuous drain current @ 25°C of 40A (Tc).

  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 70nC @ 10V
  • Maximum Input Capacitance: 3380pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 40A, 10V
  • Package: TO-252, (D-Pak)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.7300 $63.0300
25+ $4.7009 $117.5225
39+ $4.5542 $177.6138
53+ $4.4075 $233.5975
68+ $4.2608 $289.7344
91+ $3.8196 $347.5836
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Availability: 8,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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