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SQD45N05-20L-GE3

Part No SQD45N05-20L-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 50A TO252  /  N-Channel 50 V 50A (Tc) 2.5W (Ta), 75W (Tc) Surface Mount TO-252AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD45
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,000
Win Source Part Number 1095805-SQD45N05-20L-GE3
Ultra Librarian 3D Model Ultra Librarian SQD45N05-20L-GE3 CAD Model

Description

The SQD45N05-20L-GE3 is a MOSFET transistor that is part of the discrete semiconductor products - transistors - FETs, MOSFETs - single category manufactured by Vishay Siliconix.

  • Package: Tape & Reel (TR)
  • Standard Package: 2,000
  • Mounting Style: SMD (SMT)
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 50V
  • Continuous Drain Current (Id): 50A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • ECCN: EAR99.29.0095

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