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Same model may have multiple batches, images only for reference.
SQD50P04-09L_T4GE3
Same model may have multiple batches, images only for reference.

SQD50P04-09L_T4GE3

Part No SQD50P04-09L_T4GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SQD50P04-09L_T4GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6675 pF @ 20 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SQD50
Other Names 742-SQD50P04-09L_T4GE3TR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277694-SQD50P04-09L_T4GE3
Ultra Librarian 3D Model Ultra Librarian SQD50P04-09L_T4GE3 CAD Model

Description

The Vishay Siliconix 1277694-SQD50P04-09L_T4GE3 is a ThunderFET® P-Channel MOSFET transistor.

  • Mounting Type: SMD (SMT)
  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Maximum Rds On: 9.4mOhm @ 17A, 10V
  • Gate Charge: 155 nC @ 10 V
  • Input Capacitance: 6675 pF @ 20 V
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Power Dissipation: 136W (Tc)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Application: transistors - FETs, MOSFETs - Single

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