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Same model may have multiple batches, images only for reference.
SQJ200EP-T1_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ200EP-T1_GE3

Part No SQJ200EP-T1_GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 20V 20A/60A PPAK SO / Mosfet Array 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
Datasheet
SQJ200EP-T1_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 20A, 60A
Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 10V
Power - Max 27W, 48W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric
Base Product Number SQJ200
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349857-SQJ200EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ200EP-T1_GE3 CAD Model

Description

The SQJ200EP-T1_GE3 FET/MOSFET array is designed for use in discrete semiconductor products. SQJ200EP-T1_GE3.

  • Series: Automotive, AEC-Q101, TrenchFET™
  • Mounting Type: Surface Mount
  • Package: Tape and Reel
  • Standard Package: 3,000
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Power Rating: 27W to 48W
  • Configuration: 2 N-Channel (Dual)
  • Continuous Drain Current (Id) @ 25°C: 20A to 60A
  • On-Resistance (Rds On) @ Max Id, Vgs: 8.8mOhm @ 16A, 10V
  • Gate Charge (Qg) @ Max Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) @ Max Vds: 975pF @ 10V

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