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SQJ414EP-T1_GE3

Part No SQJ414EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A PPAK SO-8 / N-Channel 30 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 15 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ414
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353261-SQJ414EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ414EP-T1_GE3 CAD Model

Description

The SQJ414EP-T1_GE3 is a N-Channel MOSFET (Metal Oxide) transistor from the Automotive, AEC-Q101, TrenchFET® series from Vishay Siliconix.

  • Package: PowerPAK® SO-8
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A @ 25°C
  • Maximum Gate Voltage (Vgs): ±20V
  • Gate Charge (Qg): 25nC @ 10V
  • On-Resistance (Rds On): 12mOhm @ 4.5A and 10V
  • Power Dissipation: 45W
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5499 $60.4890
260+ $0.4513 $117.3380
400+ $0.4372 $174.8800
550+ $0.4231 $232.7050
710+ $0.4090 $290.3900
945+ $0.3668 $346.6260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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