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SQJ464EP-T2_GE3

Part No SQJ464EP-T2_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32A PPAK SO-8 / N-Channel 60 V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2086 pF @ 30 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJ464
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SQJ464EP-T2_GE3TR
Standard Package 3,000
Win Source Part Number 979863-SQJ464EP-T2_GE3
Ultra Librarian 3D Model Ultra Librarian SQJ464EP-T2_GE3 CAD Model

Description

This electronic component is a MOSFET (Metal Oxide) with a N-channel and a maximum drain to source voltage of 60V.

  • Channel: N-channel
  • Maximum Drain to Source Voltage: 60V
  • Continuous Drain Current: 32A (Tc)
  • Maximum Power Dissipation: 45W (Tc)
  • Package: PowerPAK SO-8
  • Mounting: SMD (SMT)
  • Standard Package: 3,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1829 $50.2067
56+ $1.7911 $100.3016
87+ $1.7351 $150.9537
120+ $1.6792 $201.5040
155+ $1.6232 $251.5960
207+ $1.4553 $301.2471
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,550 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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