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Same model may have multiple batches, images only for reference.
SQJ858EP-T1-GE3
Same model may have multiple batches, images only for reference.

SQJ858EP-T1-GE3

Part No SQJ858EP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 75A 5-Pin(4+Tab) PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 75 A
Fall Time 17 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 5
Packaging Tape & Reel
Power Dissipation 68 W
Radiation Hardening No
Rise Time 10 ns
RoHS Compliant
Turn-Off Delay Time 38 ns
Turn-On Delay Time 18 ns
Win Source Part Number 976782-SQJ858EP-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SQJ858EP-T1-GE3 CAD Model

Description

The Vishay 976782-SQJ858EP-T1-GE3 is a MOSFET transistor that is ideal for use in RF applications.

  • Power Dissipation: 68 W
  • Continuous Drain Current: up to 75 A
  • Rise Time: 10 ns
  • Fall Time: 17 ns
  • Gate-to-Source Voltage: 20 V
  • Package: surface mount
  • RoHS Compliant: Yes
  • Operating Temperature: -55 °C to 175 °C
  • Packaging: tape and reel
  • Supply Status: short supply

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9306 $60.4890
155+ $0.7636 $118.3580
235+ $0.7398 $173.8530
325+ $0.7159 $232.6675
420+ $0.6921 $290.6820
560+ $0.6205 $347.4800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,878 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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