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SQJ941EP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SQJ941EP-T1-GE3

Part No SQJ941EP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 8A PPAK SO-8
Datasheet
SQJ941EP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 24 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1800pF @ 10V
Maximum Power Dissipation 55W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 066023-SQJ941EP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQJ941EP-T1-GE3 CAD Model

Description

The SQJ941EP-T1-GE3 is a dual P-channel FET from Vishay.

  • Features: Logic-level gate
  • Power Dissipation: 55W
  • Supply and Demand Status: Limited
  • Popularity: Medium
  • Applications: Power management, DC-DC converters, and load switches

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.4923 $67.4615
12+ $11.0706 $132.8472
19+ $10.7240 $203.7560
25+ $10.3786 $259.4650
33+ $10.0318 $331.0494
44+ $8.9944 $395.7536
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,500 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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