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SQJ968EP-T1-GE3

Part No SQJ968EP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 17
Reference case PowerPA
Manufacturer Vishay
Manufacturer Homepage www.vishay.com
Win Source Part Number 716387-SQJ968EP-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SQJ968EP-T1-GE3 CAD Model

Description

The SQJ968EP-T1-GE3 is an N-Channel MOSFET from Vishay Siliconix, designed for high-efficiency power switching applications. This MOSFET utilizes advanced trench technology to minimize on-state resistance (Rds(on)) and gate charge (Qg), resulting in improved efficiency and reduced power losses. It is well-suited for a variety of applications, including DC-DC converters, load switches, and synchronous rectification.

Applications

  • DC-DC converters: Used in DC-DC converters for efficient voltage conversion, supporting various voltage levels.
  • Load switches: Employed as load switches for controlling power delivery to various loads in electronic devices.
  • Synchronous rectification: Integrated into synchronous rectification circuits to improve efficiency in power supplies and converters.
  • Power management: Used in power management systems to regulate and control power distribution.
  • Motor control: Integrated into motor control circuits for efficient and precise motor operation.

Features

  • Low on-state resistance (Rds(on)): Features low Rds(on) for reduced power losses and improved efficiency.
  • Low gate charge (Qg): Offers low Qg for fast switching speeds and reduced driving requirements.
  • Trench technology: Utilizes advanced trench technology for optimized performance.
  • Avalanche rated: Avalanche rated to withstand transient voltage spikes.
  • Lead-free: Compliant with RoHS standards, ensuring environmental friendliness.

Benefits

  • High efficiency: Provides high efficiency in power switching applications, reducing power losses and improving overall system performance.
  • Fast switching speed: Enables fast switching speeds for improved transient response and reduced switching losses.
  • Improved thermal performance: Offers improved thermal performance for reliable operation in demanding environments.
  • Easy to use: Simple to integrate into a wide range of power electronic circuits.
  • Cost-effective: Offers a cost-effective solution for high-efficiency power switching.

The SQJ968EP-T1-GE3 N-Channel MOSFET from Vishay Siliconix is a high-performance and efficient solution for power switching applications. Its low Rds(on), low Qg, and advanced trench technology make it well-suited for DC-DC converters, load switches, and synchronous rectification. With its high efficiency and improved thermal performance, this MOSFET provides a reliable and cost-effective solution for power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7302 $58.4160
195+ $0.5992 $116.8440
300+ $0.5805 $174.1500
415+ $0.5618 $233.1470
535+ $0.5430 $290.5050
715+ $0.4869 $348.1335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,190 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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