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SQJA64EP-T1_GE3

Part No SQJA64EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SQJA64
Other Names SQJA64EP-T1_GE3DKR,SQJA64EP-T1_GE3TR,SQJA64EP-T1_GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1277838-SQJA64EP-T1_GE3
Ultra Librarian 3D Model Ultra Librarian SQJA64EP-T1_GE3 CAD Model

Description

The SQJA64EP-T1_GE3 MOSFET is a high-performance N-channel transistor with a drain to source voltage of 60 V.

  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Package: PowerPAK® SO-8
  • Maximum Power Dissipation: 45W (Tc)
  • Application: Automotive
  • Standard Compliance: AEC-Q101
  • Technology: TrenchFET™
  • Gate Charge (Qg): 12 nC @ 10 V
  • Input Capacitance (Ciss): 670 pF @ 25 Vds
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1316 $50.9220
110+ $0.9285 $102.1350
170+ $0.8995 $152.9150
230+ $0.8705 $200.2150
300+ $0.8415 $252.4500
400+ $0.7544 $301.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,820 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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